4. 以下是Jihoon发给我的英文介绍:
My name is Jihoon Seo. I am an assistant professor of the Department of Chemical and Biomolecular Eng at Clarkson University. Currently, I am collaborating with many industry partners, and I am seeking applicants for one fully-funded Ph.D. position in our research group.
Required Applicant Qualifications:
- BS/BE and MS in Chemical Engineering or related fields.
- Motivated and Active students
- Minimum Test Score Requirements: TOEFL (80), IELTS (6.5), PTE (56) and Duolingo English Test (115).
- Preferred research experience: Surface Science, particle engineering, particle synthesis and characterization.
I do research in the planarization of advanced interconnect structures and post-CMP cleaning methods with Prof. S. V. Babu. Clarkson University is one of the premier institutes for chemical mechanical planarization (CMP) research. Prof. Babu is one of the pioneers in this area.
CMP that originated with glass polishing and then adopted for semiconductor device processing is now used in a number of manufacturing processes. It has become a critical and enabling process for the multilevel metallization necessary for interconnecting the immense number of active devices created in the silicon substrate and, more recently in the device fabrication process sequence also.
You may be interested to know about the electrochemical basis of metal CMP. Metal CMP is governed by electrochemical behaviors of metal films in the presence of oxidizers, complexing agents, and corrosion inhibitors (slurry components). When exposed to slurry components, the metal film is oxidized and removed by polishing. A goal of the metal CMP process is to uniformly polish the interconnection materials and the barrier materials with the desired removal rates and selectivity while minimizing CMP-related defects such as localized pitting, dissolution, and galvanic corrosion and stop on the oxide layer. We are also working on the post-CMP cleaning for metal films.
Please let me know if you are interested in CMP and post-CMP cleaning so that we could have a further discussion.